ARAHAN KEPADA CALON:

Jawab LIMA (5) soalan .

UNIVERSITI SAINS MALAYSIA

Peperiksaan Semester KeduaSidang Akademik 2002/2003

Februari/Mac 2003

JEE 541 - ELEKTRONIK KUASA

Masa : 3 jam

Sila pastikan bahawa kertas peperiksaan ini mengandungi SEMBILAN (9) muka surat

berserta Lampiran (6 mukasurat) bercetak clan ENAM (6) soalan sebelum anda

memulakan peperiksaan ini.

Agihan markah bagi soalan diberikan disut sebelah kanan soalan berkenaan.

Jawab semua soalan di dalam Bahasa Malaysia .

S1 .

(a)

Lakarkan simbol dan ciri v-i bagi peranti berikut:(i) GTO

(ii) TRIAC

(iii) SIT

(iv) LASCR

(b) Jelaskan kawasan pengendalian selamat bagi suatu perantisemikonduktor kuasa (SOA).

(c)Satusuis mempunyai ciri pensuisan seperti ditunjukkan oleh Rajah 1 .Jika purata kehilangan kuasa dihadkan ke nilai 600W, apakah kadarmaksimum pensuisan yang boleh dicapai?

150V

Rajah 1

2 -

[JEE 541]

0

40Ei

60li

0

30g 40g

Voltan

Arus

(30%)

(20%)

TUTUP(OFF) I

BUKA(ON)

100A

(50%)

(i)

Nilai maksimum Tc yang dibenarkan(ii)

Nilai RSA yang diperiukan .

3 -

PEE541]

S2.

(a)

Jelaskan dengan ringkas kepentingan dildt clan dvldt sebagai pelinclung

dalam rekabentuk litar tiristor .(20%)

(b)

Huraikan kepentingan penyejukan dalam peranti semikonduktor kuasa.

(20%)

(c)

Suatu peranti 2N6547 beroperasi dalam denyut berkala berfrekuensi

2 kHz. Untuk setiap tempoh 50gs berkala iaitu masa hidup, peranti

mengalami kelesapan 80W, manakala untuk tempoh selain dari masatersebut kehilangan adalah sifar. Gunakan data dari Lampiran 1 . Jika

TA=75°C, Rcs=0.4°C/W, Rci=1 .2°C/W clan Tj=150°C maksimum, kirakan:

(30%)

(d)

Thiristor seperti ditunjukkan oleh Rajah 2a di HIDUPkan clan bentuk

gelombang keluaran arus clan voltan ditunjukkan oleh Rajah 2b.

Jika vc(0) = 180 V, L= 120 p,H clan C = 6fiF hitung

(i)

arus puncak thiristor clan

(ii)

tentukan berapa lama thiristor akan diHIDUPkan?

(30%)

Im

E

Rajah 2a

L-T/2

Rajah 2b

4 -

[JEE 541]

IN.. t

S3.

(a)

Jelaskan prinsip litar rektifier satu fasa terkawal gelombang penuh beban

R dan L.(30%)

(b)

Apakah kepentingan diod meroda bebas Dm dalam litar rektifier.

(c)Litarrektifier seperti ditunjukkan oleh Rajah S3 dikendalikan dari punca 3

fasa sambungan Y, 208V, 60 Hz, mempunyai perintang R=20S2. Jika

voltan keluaran purata yang diperlukan ialah 60% dari voltan keluaran

maksimum, kira:

(i)

Sudut lengah a

(ii)

Arus rms dan arus purata beban

(iii)

Arus rms dan arus purata thiristor

(iv)

Faktor kuasa, PF.

. Ti .

v~l .

5 -

[JEE 541]

Rajah S3

V2 . -L _

.

1V.

. R 20

(20%)

(50%)

S4.

(a)

Huraikan operasi litar pengawal ac satu fasa gabungan diod dan tiristor?

(20%)

(b)

Pengawal voltan ac satu fasa ditunjukkan oleh Rajah S4(a). Voltan

Vs=240V rms, 50 Hz dan R=1092. Plotkan perubahan faktor kuasa lawan

sudut lengah thiristor.

6 -

PEE 541]

Rajah S4(a)

(40%)

(c)

Litar pengawal ac 3 fasa ditunjukkan oleh Rajah S4(b) . Lakarkan

bentukgelombang voltan keluaran untuk sudut picuan 600

7 -

PEE 541 ]

S5.

Vs/2

Vs/2

Rajah S5

(40%)

(a) Jelaskan dengan ringkas parameter prestasi bagi inverter.

(20%)

(b) Jelaskan operasi litar seperti ditunjukkan oleh Rajah S5.

(30%)

(c)

Inverter dalam Rajah S5 mempunyai beban R=592, C=100p.F danL=20mH. Frekuensi operasi inverter ialah fo=60Hz dan VS=220V.Terbitkan hubungan voltan talian seketika Vab(t) dan arus ia(t) dalamsebutan siri Fourier.

Tentukan .

(i)

Faktor harmonic THD(ii)

Jumlah herotan harmonik THD(iii)

Faktor herotan DF

8 -

[JEE 541]

S6.

(a)

Jelaskan prinsip operasi pemenggal seperti ditunjukkan oleh Rajah S6(a).

(30%)

Rajah S6(a)

Vo

(50%)

(b)

Bagi pemenggal Buck-Boost seperti ditunjukkan oleh Rajah S6(b)terbitkan hubungan voltan dan arus untuk analisis arus berterusan .

(30%)

(c)

Pemenggal dalam Rajah S6(b) membekalkan 200W, 60V ke perintang R

dari punca voltan 20V. Jika T=150gs dan L=500gH tentukan :

(i)

Nilai kitar tugas k

lmin dan lmak

(iii)

Purata arus suis

(iv)

Purata arus diod

9 -

[JEE 541]

Rajah S6(b)

(40%)

LAMPIRAN

B.5 2N6546

MOTOROLA® SEMICONDUCTOR

TECHNICAL DATA

SWITCHMODE SERIESNPN SILICON POWER TRANSISTORS

The 2N6546 and2N6547 transistors are designed for high-voltage.high-speed, power switching in inductive circuits where fall time iscritical . They are particularly suited for 115 and 220 volt lute op .erated switch-mode applications such as :

ti Switching Regulatorss PWM Inverters and Motor Controls

Solenoid and Relay Driversto Deflection Circuits

Specification Features -High Temperature Performance Specified for :Reversed Biased SOA with Inductive Loads

0Switching Times with Inductive LoadsSaturation VoltagesLeakage Currents

Copyright of Motorola, Inc. Used by permission .

2N6546

2N6547

[JEE 541]

15 AMPERENPN SILICON

POWER TRANSISTORS300 and 400 VOLTS

175 WATTS

Designer's Data for"Worst Case" Conditions

The Designers Data Sheet per-mits the design of most circuitsentirely from the information pre-sented . Limit data - representingdevice characteristics boundaries -are given to facilitate "worst case"design .

i 00.130.0a

T v

o

NOTES.1 011AENSIONNG ANDTOLEAANCINGPERANSI

Y14sin. 19822 CONTROLLING pMEN9gN INCH3 ALL RAES ANDNOTESASSOCIATED MTN

REEEI6NCED T0200A OUTLINE SHALL APPLY

v

31M_ -i 19

O.ISI

0.1

CASE 1-06TO-204AA(TO-3)

STYLE IPIN t BASE

1 EMITTERCASE COLLECTOR

.MAXIMUM RATINGSRating Symbol 2N6546 2NS547 Unit

Collector-Ematet Voltage VCEO(sus) 300 400 VdcCollector-Emitter Voltage VCEXtsust 350 450 VdcCollector-Emitter Voltage VCEV 650 850 vacEmitter Base Voltage VE8 9 0 VdcCollector Current - Continuous

Peak (1)IC

1CM1g

30Adc

Base Current - Continuous-PeAk(1)

Is

IBM1020

Adc

Emitter Current - Continuous-Peak(1)

IEIEM

2550

Adc

Total Power Dissipation pTC - 25oC0TC - 10000

Devote above 25oC

Pp 1751001 .0

Watts

W10COperating and Storage Junction

Temperature RangeI T J.T stg -,.5,0+200 oC

THERMAL CHARACTERISTICSCharacteristic Symbol Max unit

Thermal Resistance, Junction to Case RejC 1.0 ocNyMaximum Lead Temperature for Soldering

Purposes 1/8" from Case for 5 SecondsTL 275 oC

'Indicates JEDEC Registered Data111, Pulso Test . Pulse Width - 5.0 ma- D.IV CY0a G 10%.

ON~WIN 3L ` "Ifs

ts5o-1a o.a30435 125 T0.290 0.225

Q97 109. 0031 0043yI©

pr- 1 e030 is

177ISC

O.OSSt .t

007078SC

~' t0 92 BSC OU085C -©~5 e6 BSC 0.215 BSC _-0 111.111 BSC O.rbS BSCK ' 1118 1219 0.110 0180D 3.04 , 119 016sR - X.61 '~: 1.050

LU_ - .493 I-533 0210 .

LAMPIRAN

B.5 2N6546 cont'd

"ELECTRICALCHARACTERISTICS (TC - 25oC unless otherwise noted.)

OFF CHARACTERISTICS (1)

ON CHARACTERISTICS 11)

'Indicates JEDEC Registered Data .(1) Puse Test : Pulse Width ~ 300ms . Duty Cycle - 2% .

Copyright of Motorola, Inc. Used by permission .

[JEE 541]

Characteri sticSymbol Min Max Unit

Second Breakdown Collector Current with base forward biased

IS/b

0 2

-

Adct - 1,0 s Inon-repetitive) fVCE = 100 Vdc)

Collector Emitter Sustaining Voltage VCEO(sus) Vdc jI IC - 100 rr A, 18 - 0) 2146546 300 _2146547_ 400 _

Collector-Emitter Sustaining Voltage VCEX(sUsI Vdc0C = 8.0 A, Vclamp `Rated VCEX- TC ' t00oC) 214$546 350

2146547 450 -IIC - 15 A, Vclamp = Rated VCEO - 100 V, 2146546 200 -

TC =1000C) 2146547 300 -_Collector Cutoff Current ICEV mAdc

(VCEV - Rated Value. Vae(off) - 1.5 Vdcl - 1 0(VCEV - Rated Value, VBEloff) - 1.5 Vdc, TC - 100001 - 4.0Collector Cutoff Current

(VCE - Rated VCEV-Rarm = 50 ii, TC = t00oC1ICER - 50 mAdc

Emitter Cutoff Current1EB0 - 1 0 mAdc(VE8-9.0Vdc, IC-0)

SECOND AAEAiennwN

OC Current GainfIC - 5.0 Adc . VCE = 2.0 Vdc)(IC-10 Adc. VCE-20Vdc)

hFE1260

6030

[~Vdc-Collector-EmftterSaturation Voltage VCE(sat)

(IC = 10 Adc, IS - 2.0 Adcl - 1 5(IC -ISAdc,IB-3 .0Adcl - 50IIC - 10 Adc . I8 - 2 .0 Adc, TC = 1000C) - 2.5

Base-EmitterSaturation Voltage VSE(sat) Vdc0C = 10 Adc, I8 - 2.0 Adc)(IC - 10 Adc. Is - 2.0 Adc . TC = 100PC

--

t .6t .6

DYNAMIC CNAAACTCAI3TICS

Resistive LoadDelay Time

IVCC = 250 V, - 10 A, td - 0.05 usICRise Time

1 81 =182 - 2.0A,tp-looms . tr - 1 .0 usStorage Time Duty Cycle 4 2.0%) is - 4. usFall Time tf - 0.7 asInductive Load, Clamped

Storage Time (IC - 10 Alpk), Vclamp ` Rated VCEX " is, - 2 .0 A . is - 5.0 vsFall Time VSE(off) ° 5.0 Vdc, TC - 1000Cf If - 1 .5 us

TypialStorage Time (IC - 10A(pk), Vclamp - Rated VCEX , 181 -2.0 A, is 2.0 usFall Time ` 5.0VBE(off) Vdc, TC - 250C) If 0.09 us

Current-Gain - Bandwidth Product IT 6.0 28 MHz(IC - 500 mAdc . VCE = 10 Vdc- ftest = 1 .0 MHz)

Output Capacitance Cob rrI VCS - 10 Vdc. IE = 0, tress ` 1.0 MHz) D

ovITCHING CHARACTERISTICS

LAMPIRAN

476

APPENDIX B SEMICONDUCTOR DATA

B.5 2N6546 confd

znzWss

0W

NH

W

1 .4

1 .2

0.9

0.6

0.4

0.2

0 2

0.3

00.2 0.3 0.5

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 1 - OC CURRENT GAIN

0.5

1.0

2.0 3.0 5.0 7.0 10

20

IC. COLLECTOR CURRENT LAMP)

FIGURE 3 - "ON" VOLTAGE

~~OEMadI111" 1"

T, = 25oC

5.0 7.0 101 .0 2 .0 3.01C . COLLECTOR CURRENT (AMP)

FIGURE 5 - TURN-ON TIME

rr~ Ml

1

1111111105 0.1 0 .2 0.5 1 .0 20 5.0

IC . COLLECTOR CURRENT IAMPI

ĚNZW

W

2 .s2 .0

1 .5

1 .0

0.5

0

-1 .0

ě -2.0-2 .50.2 0.3 O.S 0.7 1 .0

2.0 3.0 6.0 7.0 10

IC, COLLECTOR CURRENT (AMP)

lo k7.0 k

5.0 k

3,0 k

2 .0 kz

7cr 700

Soo

300

200

1000.02

tJEE 541]

FIGURE 2 -COLLECTOR SATURATION REGION

limmimilillullmoll111111

Hill

0

ON

0.07 0.1 0.2 0.3 05 0.7 1.0

2.0 3.0

5.0 7.0

IC, COLLECTOR CURRENT LAMP)

FIGURE 4- TEMPERATURE COEFFICIENTS

0.05

FIGURE 6 - TURN-OFF TIME

~~muo. ~~~un~m=ammas~ mousses

~mmoWmaneast

""/1111 ~""11111~~11111~

V C " 250VIC~gtgl " 1g2T,) " 25oC

0 0.2 0

IC. COLLECTOR CURRENT (AMP)

s 2.0 5 .0 10 20

S'APPLIES FOR ICA9 c

hFE VCE - 2.0 V -l111""3

__~"0-ononH's=MII"

09:i0""

li11I

00'~wrmawn""70 iiZ

"iMi""~i""

iZOW"t ""rs"t~i"

"E" Oiii

ilSO

r~E"~~ "E"ron NEW

30 ~-r

20

10 ___..".~

-55"C ",

).0 VCE " 2.0VVCE " 10 V /i

B.5 2N6546 cont'd

s0ca

°z

sě3d

50

FIGURE 7 - FORWARD BIAS SAFE OPERATING AREAAREA

0

0WN

z

z

4Wc

cz

WNz

s

ZW

cuu

- 0.0.0 .~5

5 .0 7 .0

10

20

30

50

70 100

200

300 400

VCE . COLLECTOR-EMITTER VOLTAGE (VOLTS)

11MR MMMMMMMYMMMINMMMMIZEM

MMMEMM MW

60

60

40

20

1007

0.5

0 .3

0 .2

01

0070 Os

0 03

0 02

. LAMPIRAN

a o,nw

FIGURE 9 - POWER DERATING

0 R)

40 80 110

TC . CASE TEMPERATURE (OC)

SINGLE PULSE

4~11.~liC 05

0 1

MAXIMUM RATED SAFE OPERATING AREAS

SECOND RREAKOOWNOE RATING

i

Ise 200

APPENDIX B SEMICONDUCTOR DATA

477

ě

r-

20

a16

0U

FIGURE 10 - THERMAL RESPONSE

PtOk)

I1 ~

12

DUTY CYCLE 0 II .2

2 0

5 0

10

20. TIME ,

FIGURE 8 - REVERSE BIAS SAFEOPERATING AREA

00 10C 200 300 400 500

VCE COLLECTOR EMITTER VOLTAGE 'VOLTS)

There are two limitations on the power handling ability

of a transistor : average junction temperature and second

breakdown . Safe operating area curves indicate IC-VCE

limits of the transistor that must be observed for reliable

opergtion : i .e ., the transistor must not be subjected to

greater dissipation than the curves indicate .

The data of Figure 7 is based on TC = 25OC ; TJ(pk)is variable depending on power level . Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC 3 290C . Second breakdown limitations

do not derate the same as thermal limitations . Allowable

current at the voltages shown on Figure 7 may be found

at any case temperature by using the appropriate curve on

Figure 9.

TJ(pk) may be calculated from the data in Figure 10 .

At high case temperaturesi thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown .

H

~

!3EtP~i

~!

05 10

29JCIII :,(I) RAJCRBjC ` 1 .00 CM7 MSic

0 CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT II

TAPkI - TC : Ptpk1 291C,,)

[JEE 541]

so loo 200 500

n

N

L Ok

TURN OFF LOAD LINEBOUNDARY FGR 2N6547FOR 2N65a6 . VCEO AND

ARE 100 VOLTS LESSVCEx

0

VV

LEXIRt"i

I l9.0 A

iVBEtotf) 1'5 V I I

VC£O(susf( ( (

TC IOO~C

I +

1

VCEX(sus) 1f I

_

20!~~""~~[Hr~!!~""~ti

to naiil1B!_. ._

LOH""1Riti

BONDIN Wf Lt 1 !t"1 .2 TNERl4AL LIMIT).1 (SINGLE PULSE) -----05 li9 - -

----

st~a-

01 CURVES APPLY, BELOW RATED VCEO =_= 2NOS47

LAMPIRAN

PEE 541Untuk Soalan 3

LAMPIRAN

PEE 541]Untuk Soalan 4