ARAHAN KEPADA CALON:
Jawab LIMA (5) soalan .
UNIVERSITI SAINS MALAYSIA
Peperiksaan Semester KeduaSidang Akademik 2002/2003
Februari/Mac 2003
JEE 541 - ELEKTRONIK KUASA
Masa : 3 jam
Sila pastikan bahawa kertas peperiksaan ini mengandungi SEMBILAN (9) muka surat
berserta Lampiran (6 mukasurat) bercetak clan ENAM (6) soalan sebelum anda
memulakan peperiksaan ini.
Agihan markah bagi soalan diberikan disut sebelah kanan soalan berkenaan.
Jawab semua soalan di dalam Bahasa Malaysia .
S1 .
(a)
Lakarkan simbol dan ciri v-i bagi peranti berikut:(i) GTO
(ii) TRIAC
(iii) SIT
(iv) LASCR
(b) Jelaskan kawasan pengendalian selamat bagi suatu perantisemikonduktor kuasa (SOA).
(c)Satusuis mempunyai ciri pensuisan seperti ditunjukkan oleh Rajah 1 .Jika purata kehilangan kuasa dihadkan ke nilai 600W, apakah kadarmaksimum pensuisan yang boleh dicapai?
150V
Rajah 1
2 -
[JEE 541]
0
40Ei
60li
0
30g 40g
Voltan
Arus
(30%)
(20%)
TUTUP(OFF) I
BUKA(ON)
100A
(50%)
(i)
Nilai maksimum Tc yang dibenarkan(ii)
Nilai RSA yang diperiukan .
3 -
PEE541]
S2.
(a)
Jelaskan dengan ringkas kepentingan dildt clan dvldt sebagai pelinclung
dalam rekabentuk litar tiristor .(20%)
(b)
Huraikan kepentingan penyejukan dalam peranti semikonduktor kuasa.
(20%)
(c)
Suatu peranti 2N6547 beroperasi dalam denyut berkala berfrekuensi
2 kHz. Untuk setiap tempoh 50gs berkala iaitu masa hidup, peranti
mengalami kelesapan 80W, manakala untuk tempoh selain dari masatersebut kehilangan adalah sifar. Gunakan data dari Lampiran 1 . Jika
TA=75°C, Rcs=0.4°C/W, Rci=1 .2°C/W clan Tj=150°C maksimum, kirakan:
(30%)
(d)
Thiristor seperti ditunjukkan oleh Rajah 2a di HIDUPkan clan bentuk
gelombang keluaran arus clan voltan ditunjukkan oleh Rajah 2b.
Jika vc(0) = 180 V, L= 120 p,H clan C = 6fiF hitung
(i)
arus puncak thiristor clan
(ii)
tentukan berapa lama thiristor akan diHIDUPkan?
(30%)
Im
E
Rajah 2a
L-T/2
Rajah 2b
4 -
[JEE 541]
IN.. t
S3.
(a)
Jelaskan prinsip litar rektifier satu fasa terkawal gelombang penuh beban
R dan L.(30%)
(b)
Apakah kepentingan diod meroda bebas Dm dalam litar rektifier.
(c)Litarrektifier seperti ditunjukkan oleh Rajah S3 dikendalikan dari punca 3
fasa sambungan Y, 208V, 60 Hz, mempunyai perintang R=20S2. Jika
voltan keluaran purata yang diperlukan ialah 60% dari voltan keluaran
maksimum, kira:
(i)
Sudut lengah a
(ii)
Arus rms dan arus purata beban
(iii)
Arus rms dan arus purata thiristor
(iv)
Faktor kuasa, PF.
. Ti .
v~l .
5 -
[JEE 541]
Rajah S3
V2 . -L _
.
1V.
. R 20
(20%)
(50%)
S4.
(a)
Huraikan operasi litar pengawal ac satu fasa gabungan diod dan tiristor?
(20%)
(b)
Pengawal voltan ac satu fasa ditunjukkan oleh Rajah S4(a). Voltan
Vs=240V rms, 50 Hz dan R=1092. Plotkan perubahan faktor kuasa lawan
sudut lengah thiristor.
6 -
PEE 541]
Rajah S4(a)
(40%)
(c)
Litar pengawal ac 3 fasa ditunjukkan oleh Rajah S4(b) . Lakarkan
bentukgelombang voltan keluaran untuk sudut picuan 600
7 -
PEE 541 ]
S5.
Vs/2
Vs/2
Rajah S5
(40%)
(a) Jelaskan dengan ringkas parameter prestasi bagi inverter.
(20%)
(b) Jelaskan operasi litar seperti ditunjukkan oleh Rajah S5.
(30%)
(c)
Inverter dalam Rajah S5 mempunyai beban R=592, C=100p.F danL=20mH. Frekuensi operasi inverter ialah fo=60Hz dan VS=220V.Terbitkan hubungan voltan talian seketika Vab(t) dan arus ia(t) dalamsebutan siri Fourier.
Tentukan .
(i)
Faktor harmonic THD(ii)
Jumlah herotan harmonik THD(iii)
Faktor herotan DF
8 -
[JEE 541]
S6.
(a)
Jelaskan prinsip operasi pemenggal seperti ditunjukkan oleh Rajah S6(a).
(30%)
Rajah S6(a)
Vo
(50%)
(b)
Bagi pemenggal Buck-Boost seperti ditunjukkan oleh Rajah S6(b)terbitkan hubungan voltan dan arus untuk analisis arus berterusan .
(30%)
(c)
Pemenggal dalam Rajah S6(b) membekalkan 200W, 60V ke perintang R
dari punca voltan 20V. Jika T=150gs dan L=500gH tentukan :
(i)
Nilai kitar tugas k
lmin dan lmak
(iii)
Purata arus suis
(iv)
Purata arus diod
9 -
[JEE 541]
Rajah S6(b)
(40%)
LAMPIRAN
B.5 2N6546
MOTOROLA® SEMICONDUCTOR
TECHNICAL DATA
SWITCHMODE SERIESNPN SILICON POWER TRANSISTORS
The 2N6546 and2N6547 transistors are designed for high-voltage.high-speed, power switching in inductive circuits where fall time iscritical . They are particularly suited for 115 and 220 volt lute op .erated switch-mode applications such as :
ti Switching Regulatorss PWM Inverters and Motor Controls
Solenoid and Relay Driversto Deflection Circuits
Specification Features -High Temperature Performance Specified for :Reversed Biased SOA with Inductive Loads
0Switching Times with Inductive LoadsSaturation VoltagesLeakage Currents
Copyright of Motorola, Inc. Used by permission .
2N6546
2N6547
[JEE 541]
15 AMPERENPN SILICON
POWER TRANSISTORS300 and 400 VOLTS
175 WATTS
Designer's Data for"Worst Case" Conditions
The Designers Data Sheet per-mits the design of most circuitsentirely from the information pre-sented . Limit data - representingdevice characteristics boundaries -are given to facilitate "worst case"design .
i 00.130.0a
T v
o
NOTES.1 011AENSIONNG ANDTOLEAANCINGPERANSI
Y14sin. 19822 CONTROLLING pMEN9gN INCH3 ALL RAES ANDNOTESASSOCIATED MTN
REEEI6NCED T0200A OUTLINE SHALL APPLY
v
31M_ -i 19
O.ISI
0.1
CASE 1-06TO-204AA(TO-3)
STYLE IPIN t BASE
1 EMITTERCASE COLLECTOR
.MAXIMUM RATINGSRating Symbol 2N6546 2NS547 Unit
Collector-Ematet Voltage VCEO(sus) 300 400 VdcCollector-Emitter Voltage VCEXtsust 350 450 VdcCollector-Emitter Voltage VCEV 650 850 vacEmitter Base Voltage VE8 9 0 VdcCollector Current - Continuous
Peak (1)IC
1CM1g
30Adc
Base Current - Continuous-PeAk(1)
Is
IBM1020
Adc
Emitter Current - Continuous-Peak(1)
IEIEM
2550
Adc
Total Power Dissipation pTC - 25oC0TC - 10000
Devote above 25oC
Pp 1751001 .0
Watts
W10COperating and Storage Junction
Temperature RangeI T J.T stg -,.5,0+200 oC
THERMAL CHARACTERISTICSCharacteristic Symbol Max unit
Thermal Resistance, Junction to Case RejC 1.0 ocNyMaximum Lead Temperature for Soldering
Purposes 1/8" from Case for 5 SecondsTL 275 oC
'Indicates JEDEC Registered Data111, Pulso Test . Pulse Width - 5.0 ma- D.IV CY0a G 10%.
ON~WIN 3L ` "Ifs
ts5o-1a o.a30435 125 T0.290 0.225
Q97 109. 0031 0043yI©
pr- 1 e030 is
177ISC
O.OSSt .t
007078SC
~' t0 92 BSC OU085C -©~5 e6 BSC 0.215 BSC _-0 111.111 BSC O.rbS BSCK ' 1118 1219 0.110 0180D 3.04 , 119 016sR - X.61 '~: 1.050
LU_ - .493 I-533 0210 .
LAMPIRAN
B.5 2N6546 cont'd
"ELECTRICALCHARACTERISTICS (TC - 25oC unless otherwise noted.)
OFF CHARACTERISTICS (1)
ON CHARACTERISTICS 11)
'Indicates JEDEC Registered Data .(1) Puse Test : Pulse Width ~ 300ms . Duty Cycle - 2% .
Copyright of Motorola, Inc. Used by permission .
[JEE 541]
Characteri sticSymbol Min Max Unit
Second Breakdown Collector Current with base forward biased
IS/b
0 2
-
Adct - 1,0 s Inon-repetitive) fVCE = 100 Vdc)
Collector Emitter Sustaining Voltage VCEO(sus) Vdc jI IC - 100 rr A, 18 - 0) 2146546 300 _2146547_ 400 _
Collector-Emitter Sustaining Voltage VCEX(sUsI Vdc0C = 8.0 A, Vclamp `Rated VCEX- TC ' t00oC) 214$546 350
2146547 450 -IIC - 15 A, Vclamp = Rated VCEO - 100 V, 2146546 200 -
TC =1000C) 2146547 300 -_Collector Cutoff Current ICEV mAdc
(VCEV - Rated Value. Vae(off) - 1.5 Vdcl - 1 0(VCEV - Rated Value, VBEloff) - 1.5 Vdc, TC - 100001 - 4.0Collector Cutoff Current
(VCE - Rated VCEV-Rarm = 50 ii, TC = t00oC1ICER - 50 mAdc
Emitter Cutoff Current1EB0 - 1 0 mAdc(VE8-9.0Vdc, IC-0)
SECOND AAEAiennwN
OC Current GainfIC - 5.0 Adc . VCE = 2.0 Vdc)(IC-10 Adc. VCE-20Vdc)
hFE1260
6030
[~Vdc-Collector-EmftterSaturation Voltage VCE(sat)
(IC = 10 Adc, IS - 2.0 Adcl - 1 5(IC -ISAdc,IB-3 .0Adcl - 50IIC - 10 Adc . I8 - 2 .0 Adc, TC = 1000C) - 2.5
Base-EmitterSaturation Voltage VSE(sat) Vdc0C = 10 Adc, I8 - 2.0 Adc)(IC - 10 Adc. Is - 2.0 Adc . TC = 100PC
--
t .6t .6
DYNAMIC CNAAACTCAI3TICS
Resistive LoadDelay Time
IVCC = 250 V, - 10 A, td - 0.05 usICRise Time
1 81 =182 - 2.0A,tp-looms . tr - 1 .0 usStorage Time Duty Cycle 4 2.0%) is - 4. usFall Time tf - 0.7 asInductive Load, Clamped
Storage Time (IC - 10 Alpk), Vclamp ` Rated VCEX " is, - 2 .0 A . is - 5.0 vsFall Time VSE(off) ° 5.0 Vdc, TC - 1000Cf If - 1 .5 us
TypialStorage Time (IC - 10A(pk), Vclamp - Rated VCEX , 181 -2.0 A, is 2.0 usFall Time ` 5.0VBE(off) Vdc, TC - 250C) If 0.09 us
Current-Gain - Bandwidth Product IT 6.0 28 MHz(IC - 500 mAdc . VCE = 10 Vdc- ftest = 1 .0 MHz)
Output Capacitance Cob rrI VCS - 10 Vdc. IE = 0, tress ` 1.0 MHz) D
ovITCHING CHARACTERISTICS
LAMPIRAN
476
APPENDIX B SEMICONDUCTOR DATA
B.5 2N6546 confd
znzWss
0W
NH
W
1 .4
1 .2
0.9
0.6
0.4
0.2
0 2
0.3
00.2 0.3 0.5
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - OC CURRENT GAIN
0.5
1.0
2.0 3.0 5.0 7.0 10
20
IC. COLLECTOR CURRENT LAMP)
FIGURE 3 - "ON" VOLTAGE
~~OEMadI111" 1"
T, = 25oC
5.0 7.0 101 .0 2 .0 3.01C . COLLECTOR CURRENT (AMP)
FIGURE 5 - TURN-ON TIME
rr~ Ml
1
1111111105 0.1 0 .2 0.5 1 .0 20 5.0
IC . COLLECTOR CURRENT IAMPI
ĚNZW
W
2 .s2 .0
1 .5
1 .0
0.5
0
-1 .0
ě -2.0-2 .50.2 0.3 O.S 0.7 1 .0
2.0 3.0 6.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
lo k7.0 k
5.0 k
3,0 k
2 .0 kz
7cr 700
Soo
300
200
1000.02
tJEE 541]
FIGURE 2 -COLLECTOR SATURATION REGION
limmimilillullmoll111111
Hill
0
ON
0.07 0.1 0.2 0.3 05 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT LAMP)
FIGURE 4- TEMPERATURE COEFFICIENTS
0.05
FIGURE 6 - TURN-OFF TIME
~~muo. ~~~un~m=ammas~ mousses
~mmoWmaneast
""/1111 ~""11111~~11111~
V C " 250VIC~gtgl " 1g2T,) " 25oC
0 0.2 0
IC. COLLECTOR CURRENT (AMP)
s 2.0 5 .0 10 20
S'APPLIES FOR ICA9 c
hFE VCE - 2.0 V -l111""3
__~"0-ononH's=MII"
09:i0""
li11I
00'~wrmawn""70 iiZ
"iMi""~i""
iZOW"t ""rs"t~i"
"E" Oiii
ilSO
r~E"~~ "E"ron NEW
30 ~-r
20
10 ___..".~
-55"C ",
).0 VCE " 2.0VVCE " 10 V /i
B.5 2N6546 cont'd
s0ca
°z
sě3d
50
FIGURE 7 - FORWARD BIAS SAFE OPERATING AREAAREA
0
0WN
z
z
4Wc
cz
WNz
s
ZW
cuu
- 0.0.0 .~5
5 .0 7 .0
10
20
30
50
70 100
200
300 400
VCE . COLLECTOR-EMITTER VOLTAGE (VOLTS)
11MR MMMMMMMYMMMINMMMMIZEM
MMMEMM MW
60
60
40
20
1007
0.5
0 .3
0 .2
01
0070 Os
0 03
0 02
. LAMPIRAN
a o,nw
FIGURE 9 - POWER DERATING
0 R)
40 80 110
TC . CASE TEMPERATURE (OC)
SINGLE PULSE
4~11.~liC 05
0 1
MAXIMUM RATED SAFE OPERATING AREAS
SECOND RREAKOOWNOE RATING
i
Ise 200
APPENDIX B SEMICONDUCTOR DATA
477
ě
r-
20
a16
0U
FIGURE 10 - THERMAL RESPONSE
PtOk)
I1 ~
12
DUTY CYCLE 0 II .2
2 0
5 0
10
20. TIME ,
FIGURE 8 - REVERSE BIAS SAFEOPERATING AREA
00 10C 200 300 400 500
VCE COLLECTOR EMITTER VOLTAGE 'VOLTS)
There are two limitations on the power handling ability
of a transistor : average junction temperature and second
breakdown . Safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
opergtion : i .e ., the transistor must not be subjected to
greater dissipation than the curves indicate .
The data of Figure 7 is based on TC = 25OC ; TJ(pk)is variable depending on power level . Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC 3 290C . Second breakdown limitations
do not derate the same as thermal limitations . Allowable
current at the voltages shown on Figure 7 may be found
at any case temperature by using the appropriate curve on
Figure 9.
TJ(pk) may be calculated from the data in Figure 10 .
At high case temperaturesi thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown .
H
~
!3EtP~i
~!
05 10
29JCIII :,(I) RAJCRBjC ` 1 .00 CM7 MSic
0 CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT II
TAPkI - TC : Ptpk1 291C,,)
[JEE 541]
so loo 200 500
n
N
L Ok
TURN OFF LOAD LINEBOUNDARY FGR 2N6547FOR 2N65a6 . VCEO AND
ARE 100 VOLTS LESSVCEx
0
VV
LEXIRt"i
I l9.0 A
iVBEtotf) 1'5 V I I
VC£O(susf( ( (
TC IOO~C
I +
1
VCEX(sus) 1f I
_
20!~~""~~[Hr~!!~""~ti
to naiil1B!_. ._
LOH""1Riti
BONDIN Wf Lt 1 !t"1 .2 TNERl4AL LIMIT).1 (SINGLE PULSE) -----05 li9 - -
----
st~a-
01 CURVES APPLY, BELOW RATED VCEO =_= 2NOS47
LAMPIRAN
PEE 541Untuk Soalan 3
LAMPIRAN
PEE 541]Untuk Soalan 4